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| TetraFET D2220UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V - 1GHz SINGLE ENDED FEATURES H K L J E F G M * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 - SOURCE PIN 6 - GATE PIN 7 - GATE PIN 8 - SOURCE SO8 PACKAGE PIN 1 - SOURCE PIN 2 - DRAIN PIN 3 - DRAIN PIN 4 - SOURCE * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 10 dB MINIMUM Dim. A B C D E F G H J K L M N P mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45 0 7 0.20 2.18 4.57 Tol. 0.08 0.08 0.08 0.08 0.08 0.08 0.08 +0.25 -0.00 Min. Max. Max. Min. Max. 0.08 Max. 0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45 0 7 0.008 0.086 0.180 Tol. 0.003 0.003 0.003 0.003 0.003 0.003 0.003 +0.010 -0.000 Min. Max. Max. Min. Max. 0.003 Max. 0.003 APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 17.5W 40V 20V 4A -65 to 150C 200C Prelim. 12/95 D2220UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 12.5V f = 1GHz VDS = 0V VGS = -5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 0.5 0.36 10 40 20:1 40 Typ. Max. Unit V 2 1 7 mA A V S dB % -- 24 20 2 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 6C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 12/95 |
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